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Microsemi公司的MSCMDD/REF1是双路SiC MOSFET驱动器参考设计,是开源解决方案,提供了用户友好的设计指南,使得用户采用MicrosemiSiC MOSFET能更快地走向市场.参考设计还支持过度到下代SiC MOSFET,新的参考设计为用户提供了高度绝缘的SiC MOSFET双栅较驱动器开关,用作评估各种拓扑中SiC MOSFET的方法.这包括有同步死区时间保护的半桥开关闭优化模式,以及没有保护的异步信号传输.它还配置成提供共流驱动以了解无阻尼感应开关(UIS)或双脉冲测试.参考设计仅需要24V电源输入,两个栅较驱动的隔离大于2000V,每边栅较驱动能力8W,栅较驱动电压–5 V/20 V,峰值输出电流高达±30 A,高达400kHz开关频率,单端或RS485/RS422差分输入栅较控制,±100 kV/μs功能,故障信令,可配置开关死区时间,非常低的时序抖动.主要用在航空航天(激励,空调,电源分配),汽车电子(混合/电动汽车动力总成,电动汽车电池充电器,DC/DC转换器和能量恢复),*(电源,大功率马达驱动),工业(光伏逆变器,马达驱动,焊接机,UPS,开关电源,电感加热,石油钻井)以及医疗(MRI,X射线电源).本文介绍了SiCMSCMDD/REF1参考设计主要特性,框图和半桥框图,电路图和材料清单.
The dual SiC MOSFET driver reference design is an open-source solutionthat provides user-friendly design guides, enabling faster time-to-marketfor customers using MicrosemiSiC MOSFETs. The reference design alsosupports the transition to Microsemi’s next-generation SiC MOSFETs.
The new reference design provides customers with a highly isolated SiCMOSFET dual-gate driver switch as a means of evaluating SiC MOSFETsin a number of topologies. This includes modes optimized for half-bridgeswitching with synchronous dead-time protection and asynchronous** transfer with no protection. It can also be configured to provideconcurrent drive to study unclamped inductive switching (UIS) or doublepulse testing. The board supports the modification of gate resistor values toaccommodate most Microsemidiscretes and modules.
The dual SiC MOSFET driver reference design is ideal for a wide rangeof end markets and applications, including aerospace (actuation, airconditioning, and power distribution), automotive (hybrid/electric vehiclepowertrains), electric vehicle battery chargers, DC-to-DC converters, andenergy recovery), defense (power supply and high-power motor drive),industrial (photovoltaic inverters, motor drives), welding, uninterruptiblepower supply, switched-mode power supply, induction heating, and oildrilling), and medical (MRI and X-ray power supply).
SiCMSCMDD/REF1参考设计主要特性:
• Switch configurable as either a high/low sidedriver with half bridges or independent drive
• Requires only a 24 V power input
• Galvanic isolation of more than 2000 V on bothgate drivers
• Capable of 8 W of gate drive power per side
• Peak output current of up to ±30 A
• Up to 400 kHz maximum switching frequency
• Single-ended or RS485/RS422 differential inputgate control
• Desaturation shoot-through (short-circuit)protection
• ±100 kV/μs capability
• Fault **ing
• SiC compatible under voltage lockoutprotection
• Gate drive voltage is –5 V/20 V and adjustablefor lower voltages
• Switch-configurable dead time
• Option of disabling shoot-through protection fordual switch UIS/RUIS testing
• Very low timing skew

砷化镓(GaAs)及氮化镓(GaN)晶圆代工**稳懋公告2019年*二季营收情形，营收金额来到1.41亿美元。*二季营收相较于季成长20.2%，而年增(减)率情形持续受到中美贸易摩擦影响，小幅衰退6.9%；然而该事件影响幅度已有逐渐趋缓迹象，预估2019年*三季营收可望优于*二季表现，对比*二季营收**会再成长30%左右。

所谓的3D封装技术，主要为求再次提升AI之HPC芯片的运算速度及能力，试图将HBM高频宽存储器与CPU/GPU/FPGA/NPU处理器彼此整合，并藉由高端TSV(硅穿孔)技术，同时将两者垂直叠合于一起，减小彼此的传输路径、加速处理与运算速度，提高整体HPC芯片的工作效率。