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由于半导体发展技术的突破、元件尺寸逐渐微缩之际，驱使HPC芯片封装发展必须考量封装所需之体积与芯片效能的提升，因此对HPC芯片封装技术的未来发展趋势，除了现有的扇出型晶圆级封装(FOWLP)与2.5D封装外，将朝向技术难度更高的3D封装技术为开发目标。

目前3D封装技术已对外公告的新成果，现阶段除了半导体代工制造**台积电积极，已宣布预计于2020年导入量产SoIC和WoW(Wafer on Wafer)等3D封装技术外，另有IDM大厂Intel也提出Foveros之3D封装概念，将于2019下半年迎战后续处理器与HPC芯片之封装市场。

TI公司的ucc21750是设计用于1700V SiC MOSFET和IGBT单路隔离的栅较驱动器,具有先进的保护特性,业界好的动态性能和鲁棒性以及高达±10-A峰值源电流和沉电流.输入和输出的隔离采用SiO2电容隔离技术,支持高达1.5-kVRMS工作电压,2.8-kVPK抗浪涌和大于40年的隔离寿命,以及部件和部件间低差别和>150V/ns的共模噪音抑制(CMTI).
UCC21750包括新的保护特性如快速过流和短路检测,支持并联电流检测,故障报告,有源米勒钳位,输入和输出边电源UVLO,以优化SiC和IGBT开关性能和鲁棒性. M传感器的隔离模拟能用来温度或电压检测,进一步增加了驱动器的多样功能,从而简化了系统摄,尺寸和成本.工作温度–40°C 到125°C,主要用EV的牵引逆变器,板上充电器和DC充电站,工业马达驱动,服务器,通信和工业电源以及不间断电源(UPS).本文介绍了UCC21750主要特性,功能框图,典型应用电路图以及评估模块UCC21732QDWEVM-025主要特性,电指标,框图,电路图和各种测试建立图,材料清单和PCB设计图.
The UCC21750 is a galvanic isolated single channelgate drivers designed for up to 1700V SiC MOSFETsand IGBTs with advanced protection features, bestin-class dynamic performance and robustness.UCC21750 has up to ±10-A peak source and sinkcurrent.
The input side is isolated from the output side withSiO2 capacitive isolation technology, supporting up to1.5-kVRMS working voltage, 12.8-kVPK surge immunitywith longer than 40 years Isolation barrier life, as wellas providing low part-to-part skew, >150V/nscommon mode noise immunity (CMTI).
The UCC21750 includes the state-of-art protectionfeatures, such as fast overcurrent and short circuitdetection, shunt current sensing support, faultreporting, active miller clamp, input and output sidepower supply UVLO to optimize SiC and IGBTswitching behavior and robustness. The isolatedog to PWM sensor can be utilized for easiertemperature or voltage sensing, further increasing thedrivers’versatility and simplifying the system designeffort, size and cost.